Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 2108-2113
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
From the analysis of spectroscopic ellipsometry measurements in the temperature range between 16 and 300 K, the exciton splittings and shifts due to lattice mismatch in the AlxGa1−xAs/GaAs alloy system grown by liquid-phase epitaxy are obtained. The temperature dependence of the Ev10 and Ev20 exciton transitions shows that the difference in the expansion coefficients of the two materials does not play a significant role in the induced internal stress. The internal stresses are evaluated from an x-ray double-crystal diffraction technique. The shear deformation potential values of AlxGa1−xAs determined from the experimental results are in disagreement with those found in the literature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.344304
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