Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
65 (1989), S. 2238-2242
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Solid-phase-epitaxial (SPE) regrowth from selectively As+-implanted amorphous Si is analyzed by cross-sectional transmission electron microscopy. SPE regrowth in the (100) wafers proceeds into both vertical and lateral directions simultaneously. For (111) samples, SPE regrowth in the diagonal direction, i.e., 〈100〉 direction near the mask edge, is dominant. In addition to the end of range defects and projected range defects, in the SPE process, defects of a third type are generated just beneath the implantation mask edge. Differences in mask material which control the applied stress at the mask edge have little influence on edge defect generation. Substrate orientation and mask pattern direction play important roles in the edge defect formation mechanism.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.342835
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