Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
65 (1989), S. 481-485
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Single and multiple energy Fe+ implants are performed in n-type InGaAs. Rapid thermal and furnace annealings are used to activate the implanted material. Surface Fe accumulation, multiple Fe peaks, and deep in-diffusion of Fe are observed in the secondary ion mass spectrometry profiles of the implanted material. The crystal lattice perfection of the annealed material is evaluated qualitatively by photoreflectance measurements. A maximum resistivity of 4750 Ω cm is measured in the implanted material.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343129
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |