Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
64 (1988), S. 4466-4468
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Cathodoluminescence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaAs:Te wafers. Dislocation density and near-band-edge CL profiles along the wafer have different shapes. Positron lifetime measurements do not show spatial changes of vacancy concentration in the wafers, but a higher vacancy concentration has been detected in the Te-doped samples relative to SI samples. Results are discussed in terms of vacancies and impurity vacancy complexes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341269
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