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Al/n-GaAs Schottky barrier height modified with rare-earth metal interlayer (1988)

Hirose, K. ; Tsuda, H. ; Mizutani, T.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 6575-6577

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Schottky barrier heights are measured by current-voltage and capacitance-voltage methods for Al/n-GaAs contacts with a rare-earth metal (Sm, Dy, Yb) interlayer, which forms a stable alloy with Al but does not form an electrically active site in GaAs. The Schottky barrier height for each contact is found to be lowered with diode factor n〈1.06, compared to ideal Al/n-GaAs and rare-earth metal/n-GaAs contacts. The mechanisms for the lowering are discussed from standpoints of alloy formation and diffusion across the interface.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.342032

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