ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In order to fabricate metal-insulator-semiconductor (MIS) devices on III-V semiconductors it is often necessary to use deposited insulators, since these semiconductors do not form native oxides of the quality found with the Si/SiO2 system. Langmuir–Blodgett (LB) organic thin films have previously been investigated as such insulators. Unfortunately, conventional LB films have too low a melting point (about 70 °C) for practical applications. We have studied films which are spread as a monomer, then polymerize on the water surface to form poly [1,4-phenylene-5,5'(6,6')-bibenzimidazole-2,2'-diyl] (PBI). We show that deposited films of PBI have the repeatable and finely controllable thickness of conventional LB films, but remain fairly stable when subjected to temperatures up to 400 °C. Using PBI LB films as a gate insulator we have fabricated working depletion mode MISFET structures on n-type indium phosphide with gate lengths down to 1.2 μm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339307
