Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 4231-4235
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Optical absorption coefficient, dark conductivity, and photoconductivity properties of amorphous GaSe thin films are reported. The dependence of the absorption coefficient α on the photon energy (h-dash-bar)ω at the edge of the absorption band is well described by the relation α(h-dash-bar)ω=B((h-dash-bar)ω−Eopt)2 with an optical gap Eopt of 1.50–1.55 eV. The dark conductivity σd at low temperature obeys the law ln σd∝T−1/4, indicating a variable range hopping in localized states near the Fermi level. From the analysis, a density of states N(EF)(approximately-equal-to)1018 cm−3 eV−1 has been estimated. The dependence of the photoconductivity on the temperature and on the light intensity is analyzed by a simple kinetic model which takes into account two Shockley–Read type imperfections.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339095
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