ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The apparatus is described that has been used to determine the lifetime, the effective recombination velocity, and the diffusion length near the grain boundary in a polycrystalline silicon solar cell. The lifetime has been estimated from rise of the electron-beam-induced current after switching on the incident electron beam; the diffusion length and the effective recombination velocity have been determined from the steady-state electron-beam-induced current characteristics. The experimental rise-time characteristics are compared with theoretical ones.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.337077