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Inelastic light scattering from heavily doped and highly compensated GaAs:Si (1986)

Kamijoh, T. ; Hashimoto, A. ; Takano, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 59 (1986), S. 2382-2386

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The first-order Raman scattering from heavily doped and highly compensated GaAs:Si has been measured with a constant impurity concentration of 1.1 × 1019 cm−3. The damped q=0 L− and L+ branches due to the compensation-limited low mobilities have been observed. The impurity-induced forbidden mode which had been found in uncompensated p-GaAs:Zn has not appeared in the measured spectra. The line-broadening of plasmon-coupled LO phonon, L(q), and line and peak shift of TO phonon line are attributed to the impurity-induced Fröhlich interaction and the self-energy effect, respectively.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.336338

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