ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
The construction and performance characteristics of a monolithic quad-pixel Ge detector designed specifically for fluorescence x-ray absorption spectroscopy (XAS) at synchrotron radiation sources is described. The detector semiconductor element has an active surface area of 4.0 cm2 that is electrically separated into four 1.0 cm2 pixels, with little interfacial dead volume. The spatial response of the array demonstrates that cross-talk between adjacent pixels is less than 10% for 5.9-keV photons that fall within 0.5 mm of the pixel boundaries. The detector electronics system utilizes preamplifiers built at LBNL with commercial Tennelec Model TC 244 amplifiers. Employing an 55Fe test source (Mn Kα , 5.9 keV), energy resolution of better than 200 eV is achieved with a 4 msec peaking time. At 0.5 msec peaking time, pulse pileup results in a 75% throughput efficiency for an incoming count rate of 100 kHz. Initial XAS fluorescence measurements at the beamline 4 wiggler end stations at SSRL show that the detector system has several advantages over commercially available x-ray spectrometers for low-concentration counting applications. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1146862
