ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Thin film diffusion couples (Pd-Cu, individual layer thicknesses: 50 nm) have beenprepared by DC-magnetron sputtering on silicon substrates coated with amorphous inter-layers(Si3N4 on top of SiO2). The microstructural development, phase formation and the stress evolutionduring diffusion annealing have been investigated employing Auger-electron spectroscopy incombination with sputter depth profiling, ex-situ and, in particular, in-situ X-ray diffractionmeasurements. Upon annealing at relatively low temperatures (175°C to 250°C) for durations up to100 hours, considerable diffusional intermixing occurs. Interdiffusion is accompanied by thesequential formation of a new phase (Cu3Pd). The detected stress changes are discussed in terms ofpossible mechanisms of stress generation
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.524-525.801.pdf
