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  • 1
    Electronic Resource
    Electronic Resource
    An X-Ray Diffraction Method to Determine Stress at Constant Penetration/Information Depth (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 524-525 (Sept. 2006), p. 13-18 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A rigorous strategy for (X-ray) diffraction stress measurements at fixedpenetration/information depths is described. Thereby errors caused by lack of penetration-depthcontrol in traditional (X-ray) diffraction (sin2ψ) measurements are annulled. The ranges ofaccessible penetration/information depths and experimental aspects are briefly discussed. The powerof the method is illustrated by the analysis of an only small stress gradient in a sputter-depositednickel layer
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.524-525.13.pdf
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Mechanical Stress Gradients in Thin Films Analyzed Employing X-Ray Diffraction Measurements at Constant Penetration/Information Depths (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 524-525 (Sept. 2006), p. 19-24 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Stress gradients have been investigated employing a measurement strategy for diffractionmeasurements at constant penetration/information depths. Two examples have been considered: (i)sputter-deposited copper thin films on silicon wafers and (ii) γ’-Fe4N1-x layers on α-Fe substratesobtained by gaseous nitriding. In the Cu thin films rather low tensile stresses, increasing inmagnitude with increasing penetration/information depth have been found. An evaluation of themeasured lattice strains has been performed on the basis of the f(ψ) method, where the X-ray elasticconstants (XEC’s) have been calculated as weighed averages of the corresponding Voigt and ReussXEC’s and the weighing parameter has been taken as a fitting parameter. This evaluation revealsthat the grain interaction changes with increasing penetration/information depth from near-Reusstype towards Neerfeld-Hill type. In the γ’-Fe4N1-x layers stress gradients occur due to surfacerelaxation near the surface and deeper in the layer due to a nitrogen concentration gradient which isbuilt up during nitriding. First measurements in a laboratory diffractometer show the effect ofsurface relaxation on the stress-depth profile near the surface. As no single-crystal elastic constantsare available for γ’-Fe4N1-x, the mechanical elastic constants have been employed in diffractionstress analysis. The results indicated that single-crystal elastic anisotropy occurs. From the measureddata also a concentration – depth profile has been deduced
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.524-525.19.pdf
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Interdiffusion and Stress Development in Thin Film Diffusion Couples (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 524-525 (Sept. 2006), p. 801-806 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Thin film diffusion couples (Pd-Cu, individual layer thicknesses: 50 nm) have beenprepared by DC-magnetron sputtering on silicon substrates coated with amorphous inter-layers(Si3N4 on top of SiO2). The microstructural development, phase formation and the stress evolutionduring diffusion annealing have been investigated employing Auger-electron spectroscopy incombination with sputter depth profiling, ex-situ and, in particular, in-situ X-ray diffractionmeasurements. Upon annealing at relatively low temperatures (175°C to 250°C) for durations up to100 hours, considerable diffusional intermixing occurs. Interdiffusion is accompanied by thesequential formation of a new phase (Cu3Pd). The detected stress changes are discussed in terms ofpossible mechanisms of stress generation
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.524-525.801.pdf
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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