ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This work presents results on the growth of thick epitaxial layers on 4° off-oriented 4HSiCin a commercially available hot-wall CVD system. Results on background doping level,homogeneity of thickness and doping, and run-to-run reproducibility will be shown. Defectstructures we observed on 4° off-oriented substrates only are discussed. AFM measurements arepresented to show the degree of step-bunching. 6.5 kV PiN-diodes with an active device area of5.7 mm2 were fabricated and electrically characterized. In spite of the surface defects and stepbunching,up to 50% of the devices per wafer fulfilled our strict yield criteria even at 6.5 kV. Up tothe onset of avalanche, the devices exhibited extremely low leakage currents. These results turn thecheaper 4° off-oriented substrates into a promising choice for producing higher volumes of highvoltageSiC power devices at reasonable costs
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.239.pdf
