ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
High temperature anneals were used to study the evolution of native defects in semiinsulating(SI), ultrahigh purity SiC using electron paramagnetic resonance (EPR), infrared andvisible photoluminescence (PL) and COREMA (Contactless Resistivity Mapping) measurements.In EPR we observe a defect that we tentatively identify as VC-CSi-VC. The EPR intensities of thisdefect and the UD1 IRPL increase significantly with annealing in all samples
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.531.pdf