ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Depletion-mode 4H-SiC FETs were fabricated for use as harsh environment gas sensors.To enable sensitivity to NOx, O2 and H2 gases, metal oxide catalysts such as InOx were integratedinto the gate of the device. The FETs had a total area of approximately 1 mm2. Devices withvarious gate widths and lengths were fabricated and tested, with sensor performance of 5% orgreater in current change from the baseline resulting from designs having a length to width ratio ofaround 50
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1457.pdf