ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Epitaxial layers were grown in a horizontal hot-wall CVD reactor and intentionally dopedwith aluminium in a wide concentration range by varying the flow of aluminium into the reactor.The layers were grown on 4H and 6H SiC substrates on both Si and C face. Low temperaturephotoluminescence (LTPL) has been used to characterize the layers; 6H-SiC show differences inthe structure of the Al bound-exciton (Al-BE) between the two faces, suggesting that the sitepreference is face dependent. From the LTPL spectra the Al concentration in the layers can beestimated
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.97.pdf