ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We report SiC wafer polishing study to achieve high throughput with extremely flat,smooth and damageless surface. The polishing consists of three process, wafer grinding, lappingand chemical mechanical polishing (CMP), which are completed in shortest about 200 minutes intotal for 2 inch wafer. Specimens of 4H- and 6H-SiC were provided from slicing single crystal aswafers oriented (0001) with 0 or 8 degrees offset angle toward to 〈112_0〉. By the first grindingusing a diamond whetstone wheel, we realized flat surface on the wafers with small TTV error of 1μm in 15 minutes. After second process of lapping, the wafers were finished by CMP usingcolloidal silica slurry. AFM observation showed not only scratch-free surface but also atomic stepson the wafers after CMP. Rms marks extremely flat value of 0.08 nm in 10 μm square area
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.753.pdf