ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have formed high density nanodots of nickel silicide (NiSi) on ultrathin SiO2 andcharacterized their electronic charged states by using an AFM/Kelvin probe technique. Siquantum dots (Si-QDs) with an areal dot density of ~2.5x1011cm-2 were self-assembled on~3.6nm-thick thermally-grown SiO2 by controlling the early stages of LPCVD using pure SiH4gas. Subsequently, electron beam evaporation of Ni was carried out as thin as ~1.7nm inequivalent thickness at room temperature and followed by 300ºC anneal for 5min in vacuum.XPS and AFM measurements confirm the formation of NiSi dots with an average dot height of~8nm. After removal of Ni residue on SiO2 by a dilute HCl solution, bias conditions requiredfor electron charging to NiSi dots were compared with those to pure Si-QDs dots and Ni dots.The surface potential changes stepwise with respect to the tip bias due to multistep electroninjection and extraction of NiSi nanodots. In addition, it is confirmed that charge retentioncharacteristics of NiSi dots are superior to those of Si-QDs with the almost same size
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.561-565.1213.pdf