ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The effect of incorporation of cesium with implantation on the electrical characteristicsof SiO2/4H-SiC interface has been evaluated using MOS capacitors. With a cesium dosage of 1012and 3x1012 cm-2 on deposited oxide re-oxidized in steam, effective oxide charge densities of -1.4x1012 and -7.5x1011 cm-2 respectively were extracted and a cesium implant activation percentageof 33% was estimated from flatband voltage shift. Also, corresponding interfacial state densities of2.5x1013 and 1.8x1013 cm-2-eV-1 near the conduction band edge were extracted from High-Lowfrequency C-V technique, showing a decreasing Dit with increasing Cs dosage
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.751.pdf
