ISSN:
1432-1017
Schlagwort(e):
Alamethicin pore
;
Voltage-dependent conductance
;
α-helical structure
;
Dipole moment
;
Lipid bilayers
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Biologie
,
Physik
Notizen:
Abstract The voltage-dependency of alamethicin pore formation is explained by a flip-flop gating mechanism of single alamethicin molecules. The energetically preferred aggregate structure is changed from antiparallel to parallel molecule orientation by membrane voltage application. The electrical field is sensed by the permanent dipole of the α-helical molecule part which spans the hydrophobic membrane core. Ion conducting pore and pore states result from electrostatic repulsion of a varying number of parallel dipoles which arrange circularly. This model is consistent with published data and with two additional experimental facts, that pore state distributions are ionic strength dependent and pore state conductances depend on ionic current direction.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00537815
