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Digitale Medien

Coherent-to-incoherent transition in surfactant mediated growth of InAs quantum dots (1998)

Neves, B. R. A. ; Andrade, M. S.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 1712-1714

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: In this letter, we present an atomic force microscopy study of a series of Te-mediated InAs/GaAs samples with InAs coverage ranging from 1.5 to 3 monolayers. We were able to directly identify the growth mode transition and the mechanism of relaxed island formation. At the limit of coherent growth mode, strained quantum dots aggregate, forming twin quantum dots (TQDs), which are structures of two, or more, dots virtually bonded together, separated by less than 3 nm. The onset of the incoherent mode is then unambiguously characterized by the coalescence of individual TQDs forming initially small, and then larger, relaxed islands. © 1998 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.121160

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