Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
73 (1993), S. 465-467
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
We have measured impact ionization coefficients, α and β, in 150 A(ring) pseudomorphically strained materials for the first time. The measurements were made on specially designed lateral p-i-n diodes. α and β in lattice-matched GaAs layers are found to be lower than those in strained In0.2Ga0.8As and higher than those in strained In0.15Ga0.63Al0.22As. β is larger than α in all the samples. The results are discussed in terms of the changes in the band structure due to biaxial strain.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.353874
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