Digitale Medien
Isoya, J.
;
Katagiri, Masayuki
;
Umeda, T.
;
[weitere]
Son, N.T.
;
Henry, Anne
;
Gali, Adam
;
Morishita, Norio
;
Ohshima, Takeshi
;
Itoh, Hisayoshi
;
Janzén, Erik
s.l. ; Stafa-Zurich, Switzerland
Materials science forum
Vol. 527-529 (Oct. 2006), p. 593-596
ISSN:
1662-9752
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
EPR spectra originating from phosphorus shallow donors occupying silicon sites in 3C-,4H-, and 6H-SiC are identified by using CVD grown films in which the interference from the signalsfrom the nitrogen shallow donors is practically absent. Phosphorus donors occupying both silicon andcarbon sites are observed in high-energy phosphorus ion implanted semi-insulating 6H-SiC whichwas also free from the interference from the signals from the nitrogen shallow donors
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.593.pdf
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