ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
EPR spectra originating from phosphorus shallow donors occupying silicon sites in 3C-,4H-, and 6H-SiC are identified by using CVD grown films in which the interference from the signalsfrom the nitrogen shallow donors is practically absent. Phosphorus donors occupying both silicon andcarbon sites are observed in high-energy phosphorus ion implanted semi-insulating 6H-SiC whichwas also free from the interference from the signals from the nitrogen shallow donors
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.593.pdf