ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
This study, investigates the influence of the Cs concentration on the formation of MCs+ions (SiCs+ and Cs2+) in a Si wafer. The Cs concentration was varied by: Studying the surface transition period in a Si wafer under Cs+ bombardment.Profiling a Cs-implanted Si sample.Investigating different Cs+ bombarding conditions which generate different Cs concentrations in silicon under a steady-state regime.The results support the recombination model for the formation of the MCs+ ions. From this model, a quantitative evaluation of the ionization probability of Cs0 was obtained.
Additional Material:
9 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740230106
