ISSN:
1572-9486
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The threshold and memory switching effects in amorphous thin films of Ge, Cd x Te y and Sb x Se y , prepared by cathodic sputtering and vacuum evaporation are investigated. The switching is dependent on the polarity and the material of the contacts. The memory effect is typical for Ge and Cd x Te y films whilst the threshold effect sustaining a repeating frequency of about 0·1 Hz was found with Sb x Se y , films. The proper switching time was 0·2–0·4 μs for the samples under consideration. A considerable variance of the critical intensity of the electric field when the switching set in was observed, as well as a variance of its dependence on the temperature and the surface properties of the substrate. With Ge samples the switching depended on the total amount of energy accumulated in them. A simple model is proposed on the ground of the achieved results assuming electronic processes in the first phase of the duration of the switching (i.e. injection from electrodes into the amorphous film) and bulk thermal processes leading to the creatin of a conduction channel in the second phase.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01725132
