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Digitale Medien

Modeling of Atomic Displacements in the Bombardment of Copper by Ar and Xe Ions with Near-Sputtering-Threshold Energies (2000)

Kornich, G. V. ; Betz, G. ; Bazhin, A. I.

Springer

Russian physics journal 43 (2000), S. 860-866

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Details

ISSN: 1573-9228

Quelle: Springer Online Journal Archives 1860-2000

Thema: Physik

Notizen: Abstract Using the molecular dynamics method, collision-induced cascades are modeled, which are generated in the normal bombardment of a copper crystal (100) by Ar and Xe ions with energies 25, 40, and 50 eV as well as by Xe ions at 15 eV and crystal temperature 300 K. Time dependences are derived for the formation of vacancies and interstitial atoms as a function of depth of the crystal and radiation-adsorption atoms (adatoms) on its surface during the cascade development. The adatoms are shown to contribute considerably to the change in r.m.s. atomic displacement in the thermal stage of the cascade. It is proved that Ar ions produce more adatoms on the surface vacancies while Xe ions do so in the bulk of the crystal below the first atomic layer and exhibit more effective mixing in the [100] direction.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1023/A:1009493002699

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