ISSN:
1063-7834
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract A bi-epitaxial (001)YBa2Cu3O7−δ /(110)BaZrO3/(001)CeO2 three-layer heterostructure has been grown on (100)SrTiO3 by laser ablation. The epitaxial relations between the layers making up the heterostructure were derived from x-ray diffraction data. The I cRn product for the bi-epitaxial Josephson junctions thus obtained was within 1–1.5 mV for 4.2 K, and 30–60 µV for 77 K. The normal resistance R n=(2–5 Ω) was practically independent of temperature. The magnetic field dependences of I c had typically a clearly pronounced main maximum, followed by distorted subsequent peaks. Interaction of the Josephson ac current with self-induced electromagnetic waves at the 45° grain boundary and with external microwave radiation (f=11 GHz) produced current steps in the I-V characteristics of the bi-epitaxial junctions at the corresponding voltages.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1129896
