ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Behavior of the absorption coefficient spectra α(ℏω) in the region of the fundamental absorption edge of a-Si/ZrOx multilayer nanostructures obtained by evaporation as the thickness of the amorphous silicon layer decreased from 10 to 3 nm was studied. The number of periods of structures was from 7 to 14. Periodicity was controlled by the methods of small-angle X-ray diffraction and scanning probe microscopy. The regions of linear dependence of αℏω=f(ℏω) in the absorptivity spectra α(ℏω) and an increase in the effective optical gap for the thickness of a-Si layers ≤5 nm were observed. The result is interpreted as a manifestation of the quantum-size effect.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187983
