ISSN:
0332-1649
Source:
Emerald Fulltext Archive Database 1994-2005
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mathematics
Notes:
Noise parameters of high electron mobility transistors (HEMT) at microwave frequencies are a subject of active research since the knowledge of their performance is of key importance for the use of these devices for designing low-noise amplifiers. Employs a simple noise model to derive the analytical expressions for the device noise parameters F0, G0 and N in terms of the electrical elements associated with the basic equivalent circuit of an HEMT. Analyses such expressions to establish some fundamental relationships, as well as the expected noise performance of the device when the parasitic elements representing package effects are included.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1108/03321649610130236
