Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 1373-1375
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The influence of Si doping on exciton localization in modulation-doped GaN/Al0.07Ga0.93N multiple-quantum-well structures has been studied by means of photoluminescence (PL) and time-resolved PL measurements. Surprisingly, the PL decay time is constant in the range 320–420 ps for all doping levels at 2 K in these samples, due to a strong localization of the holes. The temperature dependence of radiative as well as nonradiative lifetime has also been evaluated between 2 K and room temperature for different Si doping. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1448144
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