Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 1192-1194
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An accurate method is proposed for the extraction of the carrier concentration profile (pp well) and the depletion width (Wp well) in a p-well region from high-frequency capacitance measurements by accounting for the series resistance and the capacitance of the n+ region. Wp well was calculated from the capacitance in the p-well region (Cp well), while pp well was derived from the slope of the plot 1/Cp well2 versus reverse bias. The pp well extracted was compared with profiles obtained from spreading resistance probe results. The differences between the two techniques are within 15% in the accessible depletion width, which will be discussed in view of the depth resolution anticipated. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1435809
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