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Improved thermal stability of wet-oxidized AlAs (2002)

Jia, H. Q. ; Chen, H. ; Wang, W. C. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 80 (2002), S. 974-976

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Lateral thermal wet oxidization of the AlAs layer in a GaAs/AlAs/GaAs sandwiched structure is studied by Raman spectroscopy and Nomarski microscopy. A significant improvement in thermal stability of the oxidized AlAs layer has been achieved by optimizing the oxidation conditions, which can be used to fabricate reliable devices. We show that the thermal stability is strongly related to the removal of volatile products, such as As and As2O3, as evidenced by the Raman spectroscopy measurement. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1448166

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