Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
back to result list
  • 1
    Electronic Resource
    Electronic Resource
    Ordering of Ge quantum dots with buried Si dislocation networks (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3078-3080 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried dislocation networks obtained by Si(001) wafer bonding pattern the free surface of the sample, giving rise to long-range undulations and short-range embossing, respectively, for flexion and rotation misalignement. Comparison with continuum-elasticity calculations reveals that this patterning is enhanced by strain-driven overetching. These surfaces are a template for growth, and we show that Ge quantum dots can be ordered with a fourfold symmetry by proceeding a postgrowth annealing. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1474601
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...