Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 3666-3668
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Stoichiometric, uniform, amorphous ZrO2 films with an equivalent oxide thickness of ∼1.5 nm and a dielectric constant of ∼18 were deposited by an atomic layer controlled deposition process on silicon for potential applications in metal–oxide–semiconductor (MOS) devices. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole–Frenkel emission at high electric fields. The MOS devices showed low leakage current, small hysteresis (〈50 mV), and low interface state density (∼2×1011 cm−2 eV−1). Microdiffraction and high-resolution transmission electron microscopy showed a localized monoclinic phase of α-ZrO2 and an amorphous interfacial ZrSixOy layer which has a corresponding dielectric constant of 11. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1418265
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