Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 3095-3097
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Carbon doping efficiency in GaAs grown by metalorganic chemical vapor deposition using intrinsic and extrinsic doping sources is studied. Independent of the carbon source, carbon hydrogen complexes are systematically present and depending on the growth conditions, carbon dimers can be present and form complexes with hydrogen as well. Carbon–hydrogen related complexes and dimers reduce the hole concentration decreasing the doping efficiency. Additionally, the carbon dimer introduces a deep level, decreases the hole mobility and hydrogen bonds stronger to it than to isolated carbon. Depending on the growth conditions it is possible to reach 100% doping efficiency with high hole mobility. © 2001 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.1413718
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