Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 2249-2251
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this letter, we present a normal-incident quantum-dot infrared photodetector. The detection principle is based on intersubband transition between the p states and the wetting-layer subband in the conduction band of self-assembled In(Ga)As/GaAs quantum dots. Carrier transport takes place in a channel next to the quantum-dot layers. The photoresponse is peaked at λ=6.65 μm (186 meV) and reaches a maximum value of over 11 A/W at T=30 K with a wavelength resolution of 12%. Detector response time τ is determined to be about 0.8 ms. Temperature and frequency dependence of the detector structure are discussed. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1408269
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
