Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 3259-3261
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photon-induced current (Iph) in polycrystalline-silicon thin-film transistors (poly-Si TFTs) has been investigated using a line-shaped light beam scanning method. In the off-state region, photon-excited carriers in the channel region diffuse to the drain with the diffusion length independent of the poly-Si grain size. The diffusion length is also independent whether poly-Si is hydrogenated or not. This phenomenon is observed in both n-channel and p-channel TFTs. In the subthreshold region, Iph follows the general transport equation in poly-Si. In the inversion region, Iph is proportional only to the total amount of excited carriers in the channel. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1374224
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