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Alignment of grain boundary in a Si film crystallized by a linearly polarized laser beam on a glass substrate (2001)

Horita, Susumu ; Nakata, Y. ; Shimoyama, A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 78 (2001), S. 2250-2252

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We performed crystallization of an amorphous Si film deposited on a Pyrex glass substrate using a Nd:YAG pulse-laser beam with linear polarization. It was found that, in the crystallized film, the grain boundaries were aligned with a period of about 550 nm or the wavelength of the laser beam. Meanwhile, in the Si film crystallized by circularly polarized beam that passed through the λ/4 plate, the grain boundaries were randomly generated. This means that linear polarization of the laser beam is essential to align grain boundaries periodically or to produce a periodic temperature distribution in the irradiated Si film. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1362336

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