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Direct evidence for 8-interstitial-controlled nucleation of extended defects in c-Si (2000)

Schiettekatte, F. ; Roorda, S. ; Poirier, R. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 77 (2000), S. 4322-4324

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The areal density of extended defects in P-implanted and annealed Si is observed to increase with ion dose to the power 8. A simple model based on Poisson statistics applied to point defects created during ion implantation shows that such a dependence corresponds to enhanced stability of interstitial clusters consisting of at least eight interstitial atoms, and it implies an interstitial "clustering" radius of 0.8 nm. The direct observation of "n=8" confirms the curious behavior observed earlier in transient-enhanced diffusion of B in Si, and provides a quantitative explanation of the threshold dose for the formation of extended defects in ion-implanted Si. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1336163

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