Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 3099-3101
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In order to efficiency obtain a two-dimensional (2D) image in the 3 THz range, it is important to develop a 2D far-infrared detector array. We have developed a gallium-doped germanium (Ge:Ga) far-infrared photoconductor that has a longitudinal configuration. This structure is suitable for a large format monolithic 2D array. In this letter, we show that a transparent electrode that is responsive in the far-infrared range can be formed by ion implantation, and this layer contributed to increasing quantum efficiency. We obtained a high responsivity (16.2 A/W) and good noise equivalent power (2.6×10−17 W/Hz1/2) of Ge:Ga photoconductor in longitudinal configuration by combination of ion-implanted layers and Ge:Ga bulk material. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1323742
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