Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 2148-2150
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
TlInGaAs/InP double heterostructures (DHs) were grown on (100) InP substrates by gas-source molecular-beam epitaxy. Almost no occurrence of Tl interdiffusion at the InP/TlInGaAs heterointerface was confirmed. The photoluminescence (PL) intensity for the DH was approximately ten times stronger than that of the single heterostructure. The PL peak energy and its variation with temperature for the TlInGaAs/InP DH decreased with increasing Tl composition. For the DH with a Tl composition of 13%, the PL peak energy varied only slightly with temperature (0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGaAsP/InP distributed feedback laser diodes (0.1 nm/K). © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1314881
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