ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on growth and characterization of both epitaxial and amorphous films Gd2O3 of (cursive-epsilon=14) and Y2O3(cursive-epsilon=18) as the gate dielectrics for Si prepared by ultrahigh vacuum vapor deposition. The use of vicinal Si (100) substrates is key to the growth of (110) oriented, single-domain films in the Mn2O3 structure. Typical electrical leakage results are 10−3 A/cm2 at 1 V for single domain epitaxial Gd2O3 and Y2O3 films with an equivalent SiO2 thickness, teq of 15 Å, and 10−6 A/cm2 at 1 V for smooth amorphous Y2O3 films (cursive-epsilon=18) with a teq of only 10 Å. For all the Gd2O3 films, the absence of SiO2 segregation at the interface is established from infrared absorption measurements. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126899