Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 3867-3869
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The implantation-induced damage suppression effect on 6H–SiC by simultaneous excimer laser irradiation during ion implantation (SLII) was demonstrated. A 308-nm XeCl excimer laser was used as the light source. Secondary ion mass spectroscopy indicated that SLII causes N atom diffusion in SiC. The damage suppression effect was evaluated by Rutherford backscattering channeling measurement. SLII proved to be effective for the suppression of implantation-induced damage in SiC. In the vicinity of the surface, SiC with almost no implantation-induced damage was obtained without postimplantation annealing. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126803
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