Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 2262-2264
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In0.03Ga0.97As0.99N0.01/GaAs DHBT has a low VON of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In0.03Ga0.97As0.99N0.01 base layer. GaAs is used for the collector; thus the breakdown voltage (BVCEO) is 10 V, consistent with the BVCEO of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with δ doping is inserted at the base–collector junction. The improved device has a peak current gain of seven with ideal current–voltage characteristics. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126315
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