Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 552-554
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
BaBi2Ta2O9 thin films having a layered structure were fabricated by metalorganic solution deposition technique. The films exhibited good structural, dielectric, and insulating properties. The room temperature resistivity was found to be in the range of 1012–1014 Ω cm up to 4 V corresponding to a field of 200 kV/cm across the capacitor for films annealed in the temperature range of 500–700 °C. The current-voltage (I–V) characteristics as a function of thickness for films annealed at 700 °C for 1 h, indicated bulk limited conduction and the log(I) vs V1/2 characteristics suggested a space-charge-limited conduction mechanism. The capacitance–voltage measurements on films in a metal–insulator–semiconductor configuration indicated good Si/BaBi2Ta2O9 interface characteristics and a SiO2 thickness of ∼5 nm was measured and calculated. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124419
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