Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 3841-3843
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The ultrafast nonlinear dynamics of InGaAs/InP semiconductor saturable absorber mirrors are investigated using reflective pump–probe measurements. At high fluence, ultrafast induced absorption begins to dominate over absorption bleaching. Above the InGaAs quantum well band gap, the differential reflectivity shows a ∼1 ps transient due to nonequilibrium carrier dynamics. Below band gap, the signal is dominated by a strong two-photon absorption component followed by induced absorption that decays with a time constant of ∼5 ps; these components are attributed to nonlinear absorption and subsequent carrier diffusion in the InP layer. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125474
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