ZIB

Treffer pro Seite

Treffer 1 - 1 | 1 Treffer

Alles auswählen Exportieren

Digitale Medien

Coulomb blockade in quasimetallic silicon-on-insulator nanowires (1999)

Tilke, A. ; Blick, R. H. ; Lorenz, H. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 3704-3706

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Using highly doped silicon-on-insulator (SOI) films, we demonstrate metallic Coulomb blockade in silicon nanowires at temperatures up to almost 100 K. We propose a process that leads to island formation inside the wire due to a combination of structural roughness and segregation effects during thermal oxidation. Hence, no narrowing of the SOI wire is necessary to form tunneling contacts to the single-electron transistors. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.125435

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

Treffer 1 - 1 | 1 Treffer