Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 191-193
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Cubic AlxGa1−xN alloy layers have been successfully grown for x=0−1 by gas-source molecular beam epitaxy on cubic-SiC/Si substrates, and the compositional dependence of the transverse-optic (TO) and longitudinal-optic (LO) phonon modes has been studied by Raman scattering. The LO-mode frequency of mixed crystals shows a systematic variation from the pure cubic AlN phase to the cubic GaN phase (one-mode type). On the contrary, there are two branches for the TO mode varying slowly in frequency with the composition (two-mode type). This behavior is explained within a random-element-isodisplacement model including the effect of polarization field. Our result indicates a strong polarization field acting on the cation-nitrogen bonds. © 1999 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.123289
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