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Direct evidence of Cd diffusion into Cu(In, Ga)Se2 thin films during chemical-bath deposition process of CdS films (1999)

Nakada, T. ; Kunioka, A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 74 (1999), S. 2444-2446

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The diffusion behavior at the Cu(In, Ga)Se2 (CIGS)/CdS interface of high efficiency CIGS thin film solar cells has been investigated using energy dispersive x-ray spectroscopy (EDX) and transmission electron microscopy. CdS layers were deposited on CIGS thin films using the chemical bath deposition (CBD) process. EDX analysis revealed that Cd was present in the CIGS layer approximately 100 Å from the interface boundary. In contrast to the diffusion of Cd, the Cu concentration decreased near the surface of the CIGS film, suggesting substitution of Cd for Cu atoms. These results are direct evidence of Cd diffusion into CIGS thin films during the CBD process. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.123875

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